Browsing by Subject "INN"
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Article
A systematic investigation into the conversion of beta-Ga2O3 to GaN nanowires using NH3 and H-2: Effects on the photoluminescence properties
(2010)GaN nanowires (NWs) with a hexagonal wurtzite crystal structure, diameters of 50 nm and lengths of 10 mu m have been obtained from postgrowth nitridation of monoclinic beta-Ga2O3 NWs using NH3 between 700-1090 degrees C. ...