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Browsing by Subject "Indium"

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    • Article  

      Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires in quantum dot sensitized solar cells 

      Zervos, Matthew; Vasile, Eugeniu; Tanasǎ, Eugenia; Othonos, Andreas S. (2017)
      Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires have been obtained via the deposition of Pb over Sn:In2O3 nanowires and post growth processing under H2S between 100 C-200 C and 300 C-500 C respectively. The ...

    • Article  

      Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires in quantum dot sensitized solar cells 

      Zervos, Matthew; Vasile, E.; Vasile, E.; Othonos, A. (2017)
      Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires have been obtained via the deposition of Pb over Sn:In2O3 nanowires and post growth processing under H2S between 100 C-200 C and 300 C-500 C respectively. The ...

    • Article  

      Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition 

      Zervos, Matthew; Othonos, Andreas S. (2011)
      Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...

    • Article  

      Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition 

      Zervos, Matthew; Othonos, A. (2011)
      Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...

    • Article  

      High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition 

      Zervos, Matthew; Papageorgiou, Polina; Othonos, Andreas S. (2010)
      Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...

    • Article  

      High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition 

      Zervos, Matthew; Papageorgiou, P.; Othonos, A. (2010)
      Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...

    • Article  

      An investigation into the conversion of In2O3 into InN nanowires 

      Papageorgiou, Polina; Zervos, Matthew; Othonos, Andreas S. (2011)
      Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...

    • Article  

      An investigation into the conversion of In2O3 into InN nanowires 

      Papageorgiou, P.; Zervos, Matthew; Othonos, A. (2011)
      Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...

    • Article  

      Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In 

      Zervos, Matthew; Tsokkou, Demetra; Pervolaraki, Maria; Othonos, Andreas S. (2009)
      Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low ...

    • Article  

      Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In 

      Zervos, Matthew; Tsokkou, D.; Pervolaraki, M.; Othonos, A. (2009)
      Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low ...

    • Article  

      Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission 

      Zervos, Matthew; Othonos, Andreas S.; Gianetta, V.; Nassiopoulou, Androula Galiouna (2016)
      We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...

    • Article  

      Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission 

      Zervos, Matthew; Othonos, A.; Gianetta, V.; Nassiopoulou, A. G. (2016)
      We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...

    • Article  

      Ultrafast time-resolved spectroscopy of In2 O3 nanowires 

      Tsokkou, Demetra; Othonos, Andreas S.; Zervos, Matthew (2009)
      Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...

    • Article  

      Ultrafast time-resolved spectroscopy of In2 O3 nanowires 

      Tsokkou, D.; Othonos, A.; Zervos, Matthew (2009)
      Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...

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