• Article  

      Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films 

      Mihailescu, C. N.; Symeou, E.; Svoukis, E.; Negrea, R. F.; Ghica, C.; Teodorescu, V.; Tanase, L. C.; Negrila, C.; Giapintzakis, John (2018)
      Controlling the semiconductor-to-metal transition temperature in epitaxial VO2 thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects ...
    • Article  

      Recent advances in vacuum sciences and applications 

      Stana-Kleinschek, K.; Mozetič, M.; Ostrikov, K.; Ruzic, D. N.; Curreli, D.; Cvelbar, U.; Vesel, A.; Primc, G.; Leisch, M.; Jousten, K.; Malyshev, O. B.; Hendricks, J. H.; Kövér, L.; Tagliaferro, A.; Conde, O.; Silvestre, A. J.; Giapintzakis, John; Buljan, M.; Radić, N.; Dražić, G.; Bernstorff, S.; Biederman, H.; Kylián, O.; Hanuš, J.; Miloševič, S.; Galtayries, A.; Dietrich, P.; Unger, W.; Lehocky, M.; Sedlarik, V.; Drmota-Petrič, A.; Pireaux, J. J.; Rogers, J. W.; Anderle, M. (2014)
      Recent advances in vacuum sciences and applications are reviewed. Novel optical interferometer cavity devices enable pressure measurements with ppm accuracy. The innovative dynamic vacuum standard allows for pressure ...