• Article  

      Indium oxide as a possible tunnel barrier in spintronic devices 

      Androulakis, J.; Gardelis, S.; Giapintzakis, John; Gagaoudakis, E.; Kiriakidis, G. (2005)
      We report the growth of ultra-thin indium oxide layers using the dc-magnetron sputtering method. We demonstrate that good quality tunnel barriers made of indium oxide can be routinely fabricated and employed in spintronic-related ...
    • Conference Object  

      Magnetic domain-wall racetrack memory for high density and fast data storage 

      Zhao, W. S.; Zhang, Y.; Trinh, H. -P; Klein, J. -O; Chappert, C.; Mantovan, R.; Lamperti, A.; Cowburn, R. P.; Trypiniotis, Theodossis; Klaui, M.; Heinen, J.; Ocker, B.; Ravelosona, D. (2012)
      The racetrack memory device is a new concept of Magnetic RAM (MRAM) based on controlling domain wall (DW) motion in ferromagnetic nanowires. It promises ultra-high storage density thanks to the possibility to store multiple ...