Browsing by Subject "Metal oxide semiconductor"
Now showing items 1-4 of 4
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Article
Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission
(2016)We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...
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Article
Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission
(2016)We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...
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Article
Synthesis of hybrid polymethacrylate-noble metal (M = Au, Pd) nanoparticles for the growth of metal-oxide semiconductor nanowires
(2012)Metal-oxide semiconductor nanowires (NWs) such as ZnO, β-Ga 2O 3 and SnO 2 with diameters of tens of nanometres and lengths of many micrometres have been grown using micellar nanohybrids consisting of methacrylate-based ...
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Article
Synthesis of hybrid polymethacrylate-noble metal (M = Au, Pd) nanoparticles for the growth of metal-oxide semiconductor nanowires
(2012)Metal-oxide semiconductor nanowires (NWs) such as ZnO, β-Ga 2O 3 and SnO 2 with diameters of tens of nanometres and lengths of many micrometres have been grown using micellar nanohybrids consisting of methacrylate-based ...