Browsing by Subject "Nitrides"
Now showing items 1-20 of 24
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Ab-initio electronic structure calculations and properties of [SixSn1 − x]3N4 ternary nitrides
(2016)We carry out ab initio electronic structure calculations of (SixSn1 − x)3N4 using density functional theory with projector augmented-wave potentials under the generalized gradient approximation. We find that the energetically ...
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Adaptive VN/Ag nanocomposite coatings with lubricious behavior from 25 to 1000 °c
(2010)A two-phase nanocomposite coating that consists of inclusions of silver in a vanadium nitride matrix (VN/Ag) was investigated as a potential adaptive coating with a reduced friction coefficient from 25 to 1000 °C. This ...
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Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Article
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Article
Effect of silicon nitride/oxide on the structure and the thermal conductivity of CoSi nanocomposites
(2017)In this work, the fabrication of nanocomposites with silicon nitride/oxide into the thermoelectric matrix of cobalt silicide is presented. The different concentrations of nano-Si3N4 were intentionally introduced by mechanical ...
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Article
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
(2011)Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
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Article
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
(2011)Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
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Few-step synthesis, thermal purification and structural characterization of porous boron nitride nanoplatelets
(2016)Hexagonal boron nitride (h-BN) nanoplatelets with 99 wt.% purity, 900 to 2000 nm particle width, 30 to 90 nm particle thickness, 213 m2/g specific surface area (SSA), 66% micropore SSA and 0.85 nm average pore size were ...
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Förster resonant energy transfer from an inorganic quantum well to a molecular material: Unexplored aspects, losses, and implications to applications
(2015)A systematic investigation of Förster resonant energy transfer (FRET) is reported within a hybrid prototype structure based on nitride single quantum well (SQW) donors and light emitting polymer acceptors. Self-consistent ...
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Influence of polarization field on the lasing properties of III-nitride quantum wells
(2006)A theoretical investigation of the effect of polarization-induced fields on the optoelectronic properties of a 3 nm In0.2Ga0.8N/GaN single quantum well has been carried out via a self-consistent solution of Schrödinger-Poisson ...
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Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In
(2009)Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low ...
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Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In
(2009)Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low ...
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The nitridation of ZnO nanowires
(2012)ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
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The nitridation of ZnO nanowires
(2012)ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
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Article
Plasma-based surface engineering processes for wear and corrosion protection
(1995)Vacuum plasma-based coating and treatment methods have considerable potential for reducing wear and corrosion. However, they have not been widely applied to engineering components other than tools such as those used in ...
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Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition
(2009)Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
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Article
Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition
(2009)Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
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Article
A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...
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A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...
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Article
Textured VN coatings with Ag3VO4 solid lubricant reservoirs
(2011)Silver oxovanadate powders were produced using a low temperature hydrothermal synthesis method. X-ray diffraction (XRD) and Raman microscopy revealed the formation of the α-Ag3VO4 phase, and differential scanning calorimetry ...