• Article  

      Surface passivation and conversion of SnO2 to SnS2 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Othonos, Andreas S.; Luculescu, C. R. (2015)
      SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
    • Article  

      Surface passivation and conversion of SnO2 to SnS2 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Luculescu, C. R. (2015)
      SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...