Browsing by Subject "Photoluminescence"
Now showing items 1-20 of 24
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Article
2-(2,3,4,5,6-Pentafluorophenyl)-1H-benzo[d]imidazole, a fluorine-rich building block for the preparation of conjugated polymer donors for organic solar cell applications
(2012)We have introduced the pentafluorophenyl substituted benzimidazole as a building block of conjugated polymers for optoelectronic applications. We present the synthesis of a copolymer bearing fluorene as the comonomer. A ...
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Article
Carrier dynamics in Β-Ga2O3 nanowires
(2010)Carrier dynamics have been investigated in Β-Ga2O 3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting ...
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Article
Electroluminescence by a Sm3+-diketonate-phenanthroline complex
(2003)The development of an organic light emitting diode (OLED) based on the use of Sm3+ complex as an emitting layer was investigated. The construction process also involved the use of poly(vinylcarbazole) (PVK) as the transporter ...
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Article
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
(2011)Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
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Article
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
(2011)Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
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Article
Hybrid polaritons in strongly coupled microcavities: Experiments and models
(2004)We describe the fabrication of one-dimensional quantum microcavities containing two different layers of molecular J-aggregates. We show that strong coupling can occur between the confined cavity photon mode and the two ...
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Article
Optical and electrical properties of selectively delta-doped strained InxGa1-xAs/GaAs quantum wells
(1996)We report here an investigation of selectively delta-doped strained InGaAs/GaAs quantum wells. Electronic structures of the systems were calculated by self-consistently solving the Schrödinger and Poisson equations and the ...
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Article
Optical spin injection in CuGaSe2/GaAs films
(2006)We have investigated polarization-resolved photoluminescence in epitaxially grown CuGaSe2/GaAs(001) films. Spin-polarized excitons are optically excited both below and above the characteristic crystal field splitting of ...
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Doctoral Thesis Open Access
Optoelectronic characterization and luminescent coupling effects in multi-junction solar cells
(Πανεπιστήμιο Κύπρου, Πολυτεχνική Σχολή / University of Cyprus, Faculty of Engineering, 2017-03)Κατά την διάρκεια των περασμένων ετών, τα φωτοβολταϊκά έχουν επιδείξει μια ραγδαία εξέλιξη και ένα ευρύ φάσμα τεχνολογιών έχει αναδυθεί από τους κατασκευαστές. Τα φωτοβολταϊκά πρώτης γενεάς που βασίζονται στην τεχνολογία ...
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Article
The role of humic substances in the formation of marble patinas under soil burial conditions
(2009)The present work aim to study the effect of burial on the photoluminescnece (PL) spectra of white, crystalline marble surfaces and the physicochemical processes that take place at the marble-soil interface. The PL was ...
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Article
Single crystal coordinating solvent exchange as a general method for the enhancement of the photoluminescence properties of lanthanide MOFsAAA
(2014)The discovery of new methods for the post-synthesis modification of materials is essential in order to establish suitable strategies for the tuning of their properties in a rational manner. Here we present a series of ...
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Article
Single crystal coordinating solvent exchange as a general method for the enhancement of the photoluminescence properties of lanthanide MOFsAAA
(2014)The discovery of new methods for the post-synthesis modification of materials is essential in order to establish suitable strategies for the tuning of their properties in a rational manner. Here we present a series of ...
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Article
Structure, morphology, and photoluminescence of porous Si nanowires: Effect of different chemical treatments
(2013)The structure and light-emitting properties of Si nanowires (SiNWs) fabricated by a single-step metal-assisted chemical etching (MACE) process on highly boron-doped Si were investigated after different chemical treatments. ...
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Article
Surface passivation and conversion of SnO2 to SnS2 nanowires
(2015)SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
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Article
Surface passivation and conversion of SnO2 to SnS2 nanowires
(2015)SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
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Article
A systematic investigation into the conversion of Β-Ga 2O3 to GaN nanowires using NH3 and H 2: Effects on the photoluminescence properties
(2010)GaN nanowires (NWs) with a hexagonal wurtzite crystal structure, diameters of 50 nm and lengths of 10 μm have been obtained from postgrowth nitridation of monoclinic Β-Ga2O3 NWs using NH3 between 700-1090 °C. The conversion ...
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Article
Ultrafast carrier dynamics in band edge and broad deep defect emission ZnSe nanowires
(2007)Ultrafast carrier dynamics of ZnSe nanowires grown under different growth conditions have been studied. Transient absorption measurements reveal the dependence of the competing effects of state filling and photoinduced ...
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Article
Ultrafast Spectroscopy and Red Emission from beta-Ga2O3/beta-Ga2S3 Nanowires
(2015)Ultrafast pump-probe and transient photoluminescence spectroscopy were used to investigate carrier dynamics in beta-Ga2O3 nanowires converted to beta-Ga2O3/Ga2S3 under H2S between 400 to 600 degrees C. The beta-Ga2O3 ...
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Article
Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires
(2015)Ultrafast pump-probe and transient photoluminescence spectroscopy were used to investigate carrier dynamics in β-Ga2O3 nanowires converted to β-Ga2O3/Ga2S3 under H2S between 400 to 600 °C. The β-Ga2O3 nanowires exhibited ...
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Article
Ultrafast time-resolved spectroscopy of ZnSe nanowires: Carrier dynamics of defect-related states
(2009)In recent years, ZnSe nanowires have been widely investigated for their potential applications in optoelectronics. A typical room temperature photoluminescence spectrum of ZnSe nanowires grown by vapor-liquid-solid growth ...