Browsing by Subject "Semiconductor quantum wells"
Now showing items 15 of 5

Article
Influence of polarization field on the lasing properties of IIInitride quantum wells
(2006)A theoretical investigation of the effect of polarizationinduced fields on the optoelectronic properties of a 3 nm In0.2Ga0.8N/GaN single quantum well has been carried out via a selfconsistent solution of SchrödingerPoisson ...

Article
Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers
(2008)A theoretical investigation of Inx Ga1x N/GaN single quantum well lasers with x in the range 0.05≤x≤0.3 is carried out via selfconsistent SchrödingerPoisson calculations in the effective mass approximation in order to ...

Article
Investigation of spinpolarized resonant tunneling through doublebarrier magnetic tunnel junctions by selfconsistent solution of the PoissonSchrödinger equations
(2003)The article discusses the investigation of spinpolarized resonant tunneling through double barrier magnetic tunnel junctions (DBMTJ) by the selfconsistent solution of Poissons and Schrödingers equations using transfer ...

Article
Lightinduced mobility enhancement in deltadoped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)
(1999)Persistent photoconductivity in 80 angstroms strained GaAs/In0.26Ga0.74As/GaAs quantum wells was investigated by measuring the Shubnikov de Haas and Hall effects at 4.2 K. The quantum wells were grown by molecular beam ...

Article
Optical and electrical properties of selectively deltadoped strained InxGa1xAs/GaAs quantum wells
(1996)We report here an investigation of selectively deltadoped strained InGaAs/GaAs quantum wells. Electronic structures of the systems were calculated by selfconsistently solving the Schrödinger and Poisson equations and the ...