Browsing by Subject "Semiconductor junctions"
Now showing items 1-5 of 5
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Article
Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
(2015)Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
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Article
Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
(2015)Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
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Article
Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping
(2013)The properties of the core-shell p-n junction in GaAs nanowires have been investigated via the self-consistent solution of the Poisson-Schrödinger equations in cylindrical coordinates and the effective mass approximation ...
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Article
Properties of the ubiquitous p-n junction in semiconductor nanowires
(2008)The properties of nanowires with built-in p-n junctions such as the energetic position of the one-dimensional sub-bands, charge distributions and band bending in equilibrium are determined by the self-consistent solution ...
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Article
Sn:In2O3 and Sn:In2O3/NiS2 Core-Shell Nanowires on Ni, Mo Foils and C Fibers for H2 and O2 Generation
(2017)Sn:In2O3 nanowires have been grown by the vapor liquid solid mechanism on Si, Ni, Mo, and C fibers. These were used to obtain Sn:In2O3/NiS2 core-shell nanowires by the deposition of 10 nm Ni over the Sn:In2O3 nanowires ...