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Browsing by Subject "Si (1 1 1)"

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    • Article  

      Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In 

      Zervos, Matthew; Tsokkou, Demetra; Pervolaraki, Maria; Othonos, Andreas S. (2009)
      Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low ...

    • Article  

      Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In 

      Zervos, Matthew; Tsokkou, D.; Pervolaraki, M.; Othonos, A. (2009)
      Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low ...

    • Article  

      Low-temperature growth of NiMnSb thin films by pulsed-laser deposition 

      Giapintzakis, John; Grigorescu, C.; Klini, A.; Manousaki, A.; Zorba, V.; Androulakis, J.; Viskadourakis, Z.; Fotakis, C. (2002)
      We report the growth of thin films of the ferromagnetic half-Heusler alloy NiMnSb by pulsed-laser deposition on Si (111) and polycrystalline InAs substrates. Highly crystalline films are grown using low substrate temperatures ...

    • Article  

      Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition 

      Zervos, Matthew; Othonos, Andreas S. (2009)
      Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...

    • Article  

      Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition 

      Zervos, Matthew; Othonos, A. (2009)
      Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...

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