• Article  

      High thermoelectric figure of merit of Mg2Si 0.55Sn0.4Ge0.05 materials doped with Bi and Sb 

      Khan, A. U.; Vlachos, N.; Kyratsi, Theodora (2013)
      Thermoelectric properties of new Bi- and Sb-doped Mg2Si 0.55Sn0.4Ge0.05 compounds prepared by powder methods were studied in the temperature range 300-823 K. The materials exhibited compositional inhomogeneites consisting ...
    • Article  

      Low-temperature synthesis and thermoelectric properties of n-type PbTe 

      Papageorgiou, C.; Giapintzakis, John; Kyratsi, Theodora (2013)
      n-Type PbTe compounds were synthesized at temperatures as low as 430 C. After synthesis, the materials were ground, cold pressed and sintered at 600 C. The effect of this low-temperature synthesis on the structural features ...
    • Article  

      Structural and thermal characterization of La5Ca 9Cu24O41 thin films grown by pulsed laser deposition on (1 1 0) SrTiO3 substrates 

      Svoukis, E.; Athanasopoulos, G. I.; Altantzis, T.; Lioutas, C.; Martin, R. S.; Revcolevschi, A.; Giapintzakis, John (2012)
      In the present study stoichiometric, b-axis oriented La5Ca 9Cu24O41 thin films were grown by pulsed laser deposition on (1 1 0) SrTiO3 substrates in the temperature range 600-750 °C. High resolution transmission electron ...
    • Article  

      Syntheses, crystal Structures and electronic Structures of new metal chalcoiodides Bi2CuSe3I and Bi6Cu3S10I 

      Liang, I.-C.; Bilc, D. I.; Manoli, M.; Chang, W.-Y.; Lin, W.-F.; Kyratsi, Theodora; Hsu, K. F. (2016)
      Two new metal chalcoiodides were synthesized by solid-state reactions at 400 °C. Crystal Data: Bi2CuSe3I, 1, monoclinic, C2/m, a=14.243(2) Å, b=4.1937(7) Å, c=14.647(2) Å, β=116.095(2)°, V=785.7(2) Å3, and Z=4
    • Article  

      Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition 

      Zervos, Matthew; Othonos, A. (2009)
      Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
    • Conference Object  

      Thermal conductivity measurements of anisotropic bulk samples using the 3ω method 

      Athanasopoulos, G. I.; Svoukis, E.; Viskadourakis, Z.; Giapintzakis, John (Affiliation: Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Avenue, Nicosia, 1678, CyprusAffiliation: Materials Science and Technology Department, University of Crete, P.O. Box 2208, Heraklion Crete 710 03, GreeceCorrespondence Address: Athanasopoulos, G. I.Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Avenue, Nicosia, 1678, Cyprus, 2010)
      The 3ω method has been applied to measure the anisotropic thermal conductivity of single crystals of SiO2 (quartz) and La 14-yCayCu24O41 (y = 9 and 10). A two-dimensional heat conduction model along with properly oriented ...