Browsing Τμήμα Φυσικής / Department of Physics by Author "Jaouen, H."
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Conference Object
DEFECTS CHARACTERIZATION OF ARSENIC IMPLANTED SILICON BY AC HALL EFFECT MEASUREMENTS.
Jaouen, H.; Ghibaudo, G.; Christofides, Constantinos (Materials Research Soc, 1986)AC and DC Hall effects measurements as a function of temperature (77-300K) and frequency (1Hz-100KHz) have been performed to characterize implanted Silicon films. This technique enables the determination of the annihilation ...
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Article
Electronic transport investigation of arsenic-implanted silicon. II. Annealing kinetics of defects
Christofides, Constantinos; Ghibaudo, G.; Jaouen, H. (1989)A study of the effects of the annealing temperature and time on arsenic-implanted silicon films is reported. ac and dc Hall-effect measurements as a function of temperature and frequency have been employed to characterize ...