Browsing Τμήμα Φυσικής / Department of Physics by Subject "HALL EFFECT MEASUREMENTS"
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Conference Object
DEFECTS CHARACTERIZATION OF ARSENIC IMPLANTED SILICON BY AC HALL EFFECT MEASUREMENTS.
(Materials Research Soc, 1986)AC and DC Hall effects measurements as a function of temperature (77-300K) and frequency (1Hz-100KHz) have been performed to characterize implanted Silicon films. This technique enables the determination of the annihilation ...