Browsing Τμήμα Φυσικής / Department of Physics by Subject "Room temperature"

Now showing items 1-7 of 7

    • Article  

      Direct conversion of light-polarization information into electric voltage using photoinduced inverse spin-Hall effect in Pt/GaAs hybrid structure: Spin photodetector 

      Ando, K.; Morikawa, M.; Trypiniotis, Theodossis; Fujikawa, Y.; Barnes, C. H. W.; Saitoh, E. (2010)
      The direct conversion of light-polarization information into electric voltage has been demonstrated using the photoinduced inverse spin-Hall effect in a Pt/GaAs hybrid structure. In the GaAs layer, spin-polarized carriers ...
    • Article  

      Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor 

      Hanbicki, A. T.; Jonker, B. T.; Itskos, Grigorios; Kioseoglou, G.; Petrou, Athos Chariton (2002)
      We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed ...
    • Article  

      Electric control of the spin Hall effect by intervalley transitions 

      Okamoto, N.; Kurebayashi, H.; Trypiniotis, Theodossis; Farrer, I.; Ritchie, D. A.; Saitoh, E.; Sinova, J.; Mašek, J.; Jungwirth, T.; Barnes, C. H. W. (2014)
      Controlling spin-related material properties by electronic means is a key step towards future spintronic technologies. The spin Hall effect (SHE) has become increasingly important for generating, detecting and using spin ...
    • Article  

      Magnetic properties of Fe/AlO x/GaAs(001) structures 

      Vaz, C. A. F.; Ionescu, A.; Trypiniotis, Theodossis; Bland, J. A. C.; Dalgliesh, R. M.; Langridge, S. (2005)
      We report results on the effect of the Al Ox barrier layer on the magnetic moment of Fe using polarized neutron reflection. The sample has nominal composition 25 nm Au5 nm Fe1.3 nm Al Ox GaAs (001). The metal deposition ...
    • Article  

      Spin transport in germanium at room temperature 

      Shen, C.; Trypiniotis, Theodossis; Lee, K. Y.; Holmes, S. N.; Mansell, R.; Husain, M.; Shah, V.; Li, X. V.; Kurebayashi, H.; Farrer, I.; De Groot, C. H.; Leadley, D. R.; Bell, G.; Parker, E. H. C.; Whall, T.; Ritchie, D. A.; Barnes, C. H. W. (2010)
      Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent ...
    • Article  

      Sulfur doping of M/In2O3 (M=Al,W) nanowires with room temperature near infra red emission 

      Zervos, Matthew; Mihailescu, C.; Giapintzakis, Ioannis; Othonos, Andreas S.; Travlos, A. (2015)
      We have investigated the growth of Al doped In2O3 nanowires via the vapor-liquid-solid mechanism at 800°C using Au as a catalyst. We find that the Al is not incorporated into the cubic bixbyite crystal structure of In2O3 ...
    • Article  

      White light emission via cascade Förster energy transfer in (Ga, In)N quantum well/polymer blend hybrid structures 

      Itskos, Grigorios; Belton, C. R.; Heliotis, G.; Watson, I. M.; Dawson, M. D.; Murray, R.; Bradley, D. D. C. (2009)
      We have studied the room-temperature non-radiative energy transfer processes in hybrid structures composed of (Ga, In)N/GaN single quantum wells and semiconducting polymer blend films placed in nanometre-scale proximity. ...