Browsing Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering by Title
Now showing items 339-358 of 1036
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Article
The Galling Behavior of Advanced Coating Contacts with Aluminium Alloy during Sliding Wear
(2018)This paper investigates the galling behaviour of a range of hard coatings applied to tooling surfaces during the sheet forming of an aluminium alloy workpiece. A total of three types of tooling materials were investigated, ...
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Article
Gallium hydride vapor phase epitaxy of GaN nanowires
(2011)Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
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Article
A general framework for computing the turbulence structure tensors
(2015)Good measures of the turbulence structure are important for turbulence modeling, flow diagnostics and analysis. Structure information is complementary to the componentality anisotropy that the Reynolds stress tensor carries, ...
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Article
Generating proper dynamic models for truck mobility and handling
(2004)The effectiveness and utility of an energy-based model reduction algorithm for two different vehicle system modeling applications are discussed. The first case study focuses on the vehicle dynamics model of a military ...
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Article
A grid-free abstraction of the Navier-Stokes equations in Fortran 95/2003
(2008)Computational complexity theory inspires a grid-free abstraction of the Navier-Stokes equations in Fortran 95/2003. A novel complexity analysis estimates that structured programming time grows at least quadratically with ...
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Article
Growth and characterization of ceria thin films and Ce-doped γ - Al 2 O 3 nanowires using sol-gel techniques
(2010)γ - Al 2 O 3 is a well known catalyst support. The addition of Ce to γ - Al 2 O 3 is known to beneficially retard the phase transformation of γ - Al 2 O 3 to α - Al 2 O 3 and stabilize the γ-pore structure. In this ...
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Article
Growth and structural characterization of orthorhombic and tetragonal SrCuO2 thin films
(2013)Epitaxial SrCuO2 thin films were grown on (0 0 1) SrTiO 3 substrates by pulsed laser deposition using a stoichiometric target. X-ray diffraction indicated that the SrCuO2 films undergo a structural phase transition as a ...
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Article
Growth and transport properties of HT-Li xCoO 2 thin films deposited by pulsed laser deposition
(2012)The successful in situ growth of single phase, c-axis oriented, layered structured Li xCoO 2 thin films on (0 0 0 1) Al 2O 3 substrates by pulsed laser deposition is reported. Thin films were grown in an oxygen pressure ...
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Article
Growth of polycrystalline LaNi 1-xCo xO 3 (x = 0.3, 0.5) thin films on Si(100) by pulsed laser deposition
(2004)Polycrystalline LaNi 1_xCo xO 3 (x = 0.5, 0.3) thin films have been deposited on polished Si(lOO) substrates by pulsed laser deposition. The films are grown at 650°C in ambient oxygen pressure of 0.4 mbar with an incident ...
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Article
Hall effect above Tc in untwinned single-crystal YBa2Cu3O7-x: Normal-state behavior and superconducting fluctuations
(1991)We present a measurement of the Hall coefficient RH for an untwinned single crystal of YBa2Cu3O7-x. The crystal was produced by a method that does not involve thermomechanical detwinning, and has a resistivity along the ...
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Article
Hall effect in an untwinned single crystal of YBa2Cu3O7-x
(1991)The Hall coefficient RH for untwinned single-crystal YBa2Cu3O7-x has been measured for the first time. The crystal was produced by a technique not requiring the application of stress. The measurements are made above the ...
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Article
Hall effect in detwinned single crystals of YBa2(Cu1-xZnx)3O7-δ in the mixed state
(1996)The effect of zinc doping on the mixed-state Hall effect in detwinned single crystals of YBa2Cu3O7-δ has been studied. We observe a sign reveral of the Hall effect in crystals with a superconducting transition temperature ...
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Article
Hall effect in the mixed stat detwinned single crystals
(1996)We have measured the Hall and longitudinal resistivities of detwinned (Formula presented)(Formula presented)(Formula presented)(Formula presented)(Formula presented) single crystals with x=0.05, 0.10, 0.15, and 0.20. In ...
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Article
Hall effect study of magnetoresistive perovskite LaNi0.5Co 0.5O3 thin films
(2004)We report on the Hall effect of LaNi0.5Co0.5O 3 magnetoresistive thin films grown on Si(100) substrates by pulsed laser deposition. The Hall resistivity exhibits sign reversals both in varying magnetic field and temperature, ...
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Book Chapter
Handbook of Energy Efficiency in Buildings: A lifecycle approach
(Elsevier, 2018-06-28)
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Conference Object
Hardware acceleration of n-body simulations for galactic dynamics
(Affiliation: Rutgers Univ., Piscataway, NJ, USA, United StatesCorrespondence Address: Cook, Todd A.Rutgers Univ., Piscataway, NJ, USAUnited States, 1995)N-body methods are used to simulate the evolution and interaction of galaxies. These simulations are usually run on large-scale supercomputers or on very expensive full-custom hardare. This paper presents an alternative ...
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Conference Object
Harmonic Generation in Tissue with Matrix Arrays for 4D Cardiac THI
(2019)Combining 4D echocardiography and tissue harmonic imaging (THI) may improve image quality and consequently diagnosis of heart disease. Beamforming considerations such as methodology for sampling the volume with ultrasound ...
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Article
Harmonic generation with a dual frequency pulse
(2014)Nonlinear imaging was implemented in commercial ultrasound systems over the last 15 years offering major advantages in many clinical applications. In this work, pulsing schemes coupled with a dual frequency pulse are ...
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Article
Harmonic generation with a dual frequency pulse
(2013)Nonlinear imaging was utilized in commercial ultrasound systems over the last 15 years offering major advantages in many clinical applications. In this work, pulsing schemes (pulse inversion, power modulated pulse inversion ...
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Article
Heat channeling in extremely thin silicon-on-insulator devices: A simulation study
(2013)Silicon-on-insulator (SoI) devices are particularly interesting for thermal management studies as they suffer from severe self-heating because of the very low and isotropic thermal conductivity of silicon dioxide that is ...