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Epitaxially Oriented Sn:In2O3 Nanowires Grown by the Vapor–Liquid–Solid Mechanism on m-, r-, a-Al2O3 as Scaffolds for Nanostructured Solar Cells
(2019)
We have grown highly directional, epitaxial Sn:In2O3 nanowires via the vapor–liquid–solid mechanism on m-, r- and a-Al2O3 between 800 and 900 °C at 1 mbar. The Sn:In2O3 nanowires have the cubic bixbyite crystal structure ...
Epitaxial highly ordered Sb:SnO2 nanowires grown by the vapor liquid solid mechanism on m-, r- and a-Al2O3
(2019)
Epitaxial, highly ordered Sb:SnO2 nanowires were grown by the vapor–liquid–solid mechanism on m-, r- and a-Al2O3 between 700 °C and 1000 °C using metallic Sn and Sb with a mass ratio of Sn/Sb = 0.15 ± 0.05 under a flow of ...
SnO2/PbOx (x = 1, 2) Core–Shell Nanowires and Their Growth on C-Fiber Networks for Energy Storage
(2018)
SnO2 nanowires were grown on Si, fused SiO2, and C fibers by the vapor–liquid–solid mechanism at 800 °C and 10–1 mbar, and SnO2/PbO core–shell nanowires were obtained by the deposition of 50 nm Pb over the SnO2 nanowires ...
Doping and Conductivity Limitations in Sb:SnO2 Nanowires Grown by the Vapor Liquid Solid Mechanism
(2018)
Sb doped SnO2 nanowires have been grown via the vapor liquid solid mechanism on fused SiO2 at 800 °C and 1 mbar under a flow of Ar and O2 by using an excess of metallic Sb in conjunction with Sn. We obtain highly crystalline ...
Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
(2011)
Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination ...
Investigation of Different Si(111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE
(2001)
The in-situ low temperature preparation of hydrogen passivated Si(111) surfaces has been investigated for GaN growth by rf-plasma source molecular beam epitaxy. The GaN/Si heterostructures were analyzed by transmission ...
An investigation into the conversion of In2O3 into InN nanowires
(2011)
Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...
Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE
(2001)
The nitridation of the (0001) sapphire surface by a nitrogen rf-plasma source used in GaN molecular beam epitaxy has been investigated. Auger electron spectroscopy measurements were used to estimate the extent of the ...
Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN
(2006)
Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by ...
Ab-initio electronic structure calculations and properties of [SixSn1 − x]3N4 ternary nitrides
(2016)
We carry out ab initio electronic structure calculations of (SixSn1 − x)3N4 using density functional theory with projector augmented-wave potentials under the generalized gradient approximation. We find that the energetically ...