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Epitaxially Oriented Sn:In2O3 Nanowires Grown by the Vapor–Liquid–Solid Mechanism on m-, r-, a-Al2O3 as Scaffolds for Nanostructured Solar Cells
(2019)
We have grown highly directional, epitaxial Sn:In2O3 nanowires via the vapor–liquid–solid mechanism on m-, r- and a-Al2O3 between 800 and 900 °C at 1 mbar. The Sn:In2O3 nanowires have the cubic bixbyite crystal structure ...
Epitaxial highly ordered Sb:SnO2 nanowires grown by the vapor liquid solid mechanism on m-, r- and a-Al2O3
(2019)
Epitaxial, highly ordered Sb:SnO2 nanowires were grown by the vapor–liquid–solid mechanism on m-, r- and a-Al2O3 between 700 °C and 1000 °C using metallic Sn and Sb with a mass ratio of Sn/Sb = 0.15 ± 0.05 under a flow of ...
SnO2/PbOx (x = 1, 2) Core–Shell Nanowires and Their Growth on C-Fiber Networks for Energy Storage
(2018)
SnO2 nanowires were grown on Si, fused SiO2, and C fibers by the vapor–liquid–solid mechanism at 800 °C and 10–1 mbar, and SnO2/PbO core–shell nanowires were obtained by the deposition of 50 nm Pb over the SnO2 nanowires ...
Doping and Conductivity Limitations in Sb:SnO2 Nanowires Grown by the Vapor Liquid Solid Mechanism
(2018)
Sb doped SnO2 nanowires have been grown via the vapor liquid solid mechanism on fused SiO2 at 800 °C and 1 mbar under a flow of Ar and O2 by using an excess of metallic Sb in conjunction with Sn. We obtain highly crystalline ...
Current Transport Properties of CuS/Sn:In2O3 versus CuS/SnO2 Nanowires and Negative Differential Resistance in Quantum Dot Sensitized Solar Cells
(2016)
The structural, optical, and electrical transport properties of nanowires obtained by the deposition of Cu over Sn doped In2O3 and SnO2 nanowires followed by processing under H2S between 100 and 500°C have been investigated ...
Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
(2011)
Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination ...
Investigation of Different Si(111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE
(2001)
The in-situ low temperature preparation of hydrogen passivated Si(111) surfaces has been investigated for GaN growth by rf-plasma source molecular beam epitaxy. The GaN/Si heterostructures were analyzed by transmission ...
An investigation into the conversion of In2O3 into InN nanowires
(2011)
Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...
Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE
(2001)
The nitridation of the (0001) sapphire surface by a nitrogen rf-plasma source used in GaN molecular beam epitaxy has been investigated. Auger electron spectroscopy measurements were used to estimate the extent of the ...
Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN
(2006)
Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by ...