Indium oxide as a possible tunnel barrier in spintronic devices
dc.contributor.author | Androulakis, J. | en |
dc.contributor.author | Gardelis, S. | en |
dc.contributor.author | Giapintzakis, John | en |
dc.contributor.author | Gagaoudakis, E. | en |
dc.contributor.author | Kiriakidis, G. | en |
dc.creator | Androulakis, J. | en |
dc.creator | Gardelis, S. | en |
dc.creator | Giapintzakis, John | en |
dc.creator | Gagaoudakis, E. | en |
dc.creator | Kiriakidis, G. | en |
dc.date.accessioned | 2019-05-06T12:23:19Z | |
dc.date.available | 2019-05-06T12:23:19Z | |
dc.date.issued | 2005 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48203 | |
dc.description.abstract | We report the growth of ultra-thin indium oxide layers using the dc-magnetron sputtering method. We demonstrate that good quality tunnel barriers made of indium oxide can be routinely fabricated and employed in spintronic-related devices. Simple magnetic tunnel junctions (MTJs) were fabricated in a cross geometry using ex situ thermally evaporated cobalt and permalloy. Our best junctions obey the Rowell criteria for tunneling and exhibit a tunnel magnetoresistance of 15% at 100 K. © 2004 Elsevier B.V. All rights reserved. | en |
dc.language.iso | eng | en |
dc.source | Thin Solid Films | en |
dc.subject | Magnetic field effects | en |
dc.subject | Ferromagnetic materials | en |
dc.subject | Film growth | en |
dc.subject | Indium compounds | en |
dc.subject | Carrier concentration | en |
dc.subject | Electric resistance | en |
dc.subject | Heterojunctions | en |
dc.subject | Indium oxide | en |
dc.subject | Magnetic structure | en |
dc.subject | Magnetic structures | en |
dc.subject | Magnetic tunnel junction | en |
dc.subject | Magnetic tunnel junctions (MTJ) | en |
dc.subject | Magnetoresistance | en |
dc.subject | Magnetron sputtering | en |
dc.subject | Sandwich structures | en |
dc.subject | Transparency | en |
dc.subject | Tunnel barriers | en |
dc.subject | Tunneling | en |
dc.subject | Ultrathin films | en |
dc.title | Indium oxide as a possible tunnel barrier in spintronic devices | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1016/j.tsf.2004.06.162 | |
dc.description.volume | 471 | |
dc.description.startingpage | 293 | |
dc.description.endingpage | 297 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Giapintzakis, John [0000-0002-7277-2662] | |
dc.description.totalnumpages | 293-297 | |
dc.gnosis.orcid | 0000-0002-7277-2662 |
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