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dc.contributor.authorGeorgakilas, A.en
dc.contributor.authorMikroulis, S.en
dc.contributor.authorCimalla, V.en
dc.contributor.authorZervos, Matthewen
dc.contributor.authorKostopoulos, A.en
dc.contributor.authorKomninou, Phen
dc.contributor.authorKehagias, Then
dc.contributor.authorKarakostas, Then
dc.creatorGeorgakilas, A.en
dc.creatorMikroulis, S.en
dc.creatorCimalla, V.en
dc.creatorZervos, Matthewen
dc.creatorKostopoulos, A.en
dc.creatorKomninou, Phen
dc.creatorKehagias, Then
dc.creatorKarakostas, Then
dc.description.abstractThe nitridation of the (0001) sapphire surface by a nitrogen rf-plasma source used in GaN molecular beam epitaxy has been investigated. Auger electron spectroscopy measurements were used to estimate the extent of the nitridation effect. Significant nitridation occurred during 100 min at a high temperature (HT) of 700°C and the nitridated layers usually exhibited three-dimensional islands, while weak nitridation occurred at a low temperature (LT) of 165°C and resulted to atomically flat surfaces. Linear time dependence has been found for the amount of HT nitridation. High nitridation temperature resulted in Ga-face and low temperature in N-face polarities of overgrown GaN films. Electron microscopy observations revealed that the N-face material exhibited a superior crystalline quality although presented higher surface roughness.en
dc.sourcePhysica Status Solidi (A) Applied Researchen
dc.titleEffects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBEen
dc.description.endingpage570Πολυτεχνική Σχολή / Faculty of EngineeringΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.contributor.orcidZervos, Matthew [0000-0002-6321-233X]

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