Femtosecond carrier dynamics in In 2O 3 nanocrystals
SourceNanoscale Research Letters
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We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photo-generated carriers in In 2O 3 nanocrystals. Intensity measurements reveal that Auger recombination plays a crucial role in the carrier dynamics for the carrier densities investigated in this study. A simple differential equation model has been utilized to simulate the photo-generated carrier dynamics in the nanocrystals and to fit the fluence-dependent differential absorption measurements. The average value of the Auger coefficient obtained from fitting to the measurements was γ = 5.9 ± 0.4 × 10 -31 cm 6 s -1. Similarly the average relaxation rate of the carriers was determined to be approximately τ = 110 ± 10 ps. Time-resolved measurements also revealed 25 ps delay for the carriers to reach deep traps states which have a subsequent relaxation time of approximately 300 ps.