Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires

Abstract

The numerical self-consistent solution of the Poisson-Schrodinger equations in cylindrical coordinates for calculating electronic states in the effective mass approximation was implemented. High accuracy and rapid convergence were attained, which permitted to study in detail the electronic structure of a double-barrier resonant tunneling QWire. It was shown that the transport was dominated by zero-angular-momentum states and argue that the small bias-voltage asymmetry not previously accounted for was due to the strain-induced piezoelectric charges at the InAs/InP interfaces.