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dc.contributor.authorAnwar, M.en
dc.contributor.authorHogarth, C. A.en
dc.contributor.authorTheocharis, Charis R.en
dc.creatorAnwar, M.en
dc.creatorHogarth, C. A.en
dc.creatorTheocharis, Charis R.en
dc.description.abstractA series of amorphous MoO3-SiO thin films of varying compositions were investigated by infrared spectroscopy. In some cases, a shift in band frequency was observed. Some new peaks appeared when SiO was mixed in MoO3. These new peaks are due to bond-rocking vibrations of the bridging oxygen atoms (430 to 440 cm-1), bending motion of the same oxygen atom (800 to 810 cm-1), stretching vibration of non-bridging oxygen atoms (876 cm-1) and bond-stretching vibrations of oxygen atoms (1040 to 1060 cm-1) in SiO. The band of 940 cm-1 is attributed to the absorption of oxygen atoms in its two-fold-coordinated bridging Si-O-Si bond at an isolated site indicating that there is no oxygen atom as a second-nearest neighbour to any other oxygen atom.en
dc.sourceJournal of Materials Scienceen
dc.subjectAmorphous Thin Filmsen
dc.subjectFilms--Spectroscopic Analysisen
dc.subjectMixed Thin Filmsen
dc.subjectSpectroscopy, Infrareden
dc.subjectVacuum Evaporationen
dc.titleInfrared spectroscopic study of vacuum evaporated amorphous thin films of MoO3-SiOen
dc.description.issue2 Aen
dc.description.endingpage1111 Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied SciencesΤμήμα Χημείας / Department of Chemistry
dc.description.notes<p>Cited By :3</p>en
dc.contributor.orcidTheocharis, Charis R. [0000-0002-1669-4954]

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