| dc.contributor.author | Benjamin, S. D. | en |
| dc.contributor.author | Loka, H. S. | en |
| dc.contributor.author | Othonos, Andreas S. | en |
| dc.contributor.author | Smith, P. W. E. | en |
| dc.creator | Benjamin, S. D. | en |
| dc.creator | Loka, H. S. | en |
| dc.creator | Othonos, Andreas S. | en |
| dc.creator | Smith, P. W. E. | en |
| dc.date.accessioned | 2019-12-02T15:28:44Z | |
| dc.date.available | 2019-12-02T15:28:44Z | |
| dc.date.issued | 1996 | |
| dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58528 | |
| dc.description.abstract | We present the results of a study of the subpicosecond dynamic behavior of optically induced absorption changes in low-temperature-grown GaAs. We show that the observed behavior is dominated by mid-gap trap states, and can be accurately modeled by the rate equations previously developed to describe quasi-cw results. Our data give the first approximate values for trap emptying times in this material. © 1996 American Institute of Physics. | en |
| dc.source | Applied Physics Letters | en |
| dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000586425&doi=10.1063%2f1.116178&partnerID=40&md5=c948b95188ff5ba87c8bc2bccad8ca6b | |
| dc.title | Ultrafast dynamics of nonlinear absorption in low-temperature-grown GaAs | en |
| dc.type | info:eu-repo/semantics/article | |
| dc.identifier.doi | 10.1063/1.116178 | |
| dc.description.volume | 68 | |
| dc.description.issue | 18 | |
| dc.description.startingpage | 2544 | |
| dc.description.endingpage | 2546 | |
| dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
| dc.author.department | Τμήμα Φυσικής / Department of Physics | |
| dc.type.uhtype | Article | en |
| dc.description.notes | <p>Cited By :73</p> | en |
| dc.source.abbreviation | Appl.Phys.Lett. | en |
| dc.contributor.orcid | Othonos, Andreas S. [0000-0003-0016-9116] | |
| dc.gnosis.orcid | 0000-0003-0016-9116 | |
