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dc.contributor.authorChristofides, Constantinosen
dc.contributor.authorDiakonos, Fotis K.en
dc.contributor.authorSeas, Antoniosen
dc.contributor.authorChristou, Chrisen
dc.contributor.authorNestoros, Mariosen
dc.contributor.authorMandelis, Andreasen
dc.creatorChristofides, Constantinosen
dc.creatorDiakonos, Fotis K.en
dc.creatorSeas, Antoniosen
dc.creatorChristou, Chrisen
dc.creatorNestoros, Mariosen
dc.creatorMandelis, Andreasen
dc.date.accessioned2019-12-02T15:29:55Z
dc.date.available2019-12-02T15:29:55Z
dc.date.issued1996
dc.identifier.issn0021-8979
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58591
dc.description.abstractA complete theoretical analysis of the laser photomodulated thermoreflectance signal from a two-layer semiconducting wafer is presented. It is shown that the electronic and thermal properties of a thin surface layer may be determined by using the measured induced photothermal signal. Several numerical simulations are performed in order to study the influence of various electronic, optical and thermal parameters of the two-layer sample on the photomodulated thermoreflectance signal. The influence of the upper layer as well as the influence of the substrate on the signal are also discussed and parameter regimes are identified, where the characterization of the thin overlayer may be possible using this technique. (C) 1996 American Institute of Physics.en
dc.sourceJournal of Applied Physicsen
dc.subjectINTERFEROMETRYen
dc.subjectMODULATED OPTICAL REFLECTANCEen
dc.subjectPHOTOACOUSTIC-SPECTROSCOPYen
dc.subjectSILICONen
dc.titleTwo-layer model for photomodulated thermoreflectance of semiconductor wafersen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1063/1.362970
dc.description.volume80
dc.description.issue3
dc.description.startingpage1713
dc.description.endingpage1725
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.description.notes<p>PT: Jen
dc.description.notesTC: 20en
dc.description.notesJ9: J APPL PHYS</p>en
dc.source.abbreviationJ.Appl.Phys.en
dc.contributor.orcidNestoros, Marios [0000-0002-2343-4771]
dc.contributor.orcidChristofides, Constantinos [0000-0002-4020-4660]
dc.gnosis.orcid0000-0002-2343-4771
dc.gnosis.orcid0000-0002-4020-4660


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