dc.contributor.author | Christofides, Constantinos | en |
dc.contributor.author | Ghibaudo, G. | en |
dc.contributor.author | Jaouen, H. | en |
dc.creator | Christofides, Constantinos | en |
dc.creator | Ghibaudo, G. | en |
dc.creator | Jaouen, H. | en |
dc.date.accessioned | 2019-12-02T15:29:56Z | |
dc.date.available | 2019-12-02T15:29:56Z | |
dc.date.issued | 1989 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58597 | |
dc.description.abstract | A study of the effects of the annealing temperature and time on arsenic-implanted silicon films is reported. ac and dc Hall-effect measurements as a function of temperature and frequency have been employed to characterize arsenic-implanted silicon films. The method of spreading resistance has also been used, allowing measurement of the resistance of the implantation damage layer as a function of depth. These techniques allow one to probe the annihilation processes of damage layer defects as a function of annealing conditions (i.e., temperature and time). The activation energy of the recovery process of the ionic implantation damage, found to be about 0.6 eV, is attributed to a local reconstruction of the implanted layer. | en |
dc.source | Journal of Applied Physics | en |
dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-36549096413&doi=10.1063%2f1.343195&partnerID=40&md5=4465df365246f81c68a4e1f0972e60e4 | |
dc.title | Electronic transport investigation of arsenic-implanted silicon. II. Annealing kinetics of defects | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1063/1.343195 | |
dc.description.volume | 65 | |
dc.description.issue | 12 | |
dc.description.startingpage | 4840 | |
dc.description.endingpage | 4844 | |
dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
dc.author.department | Τμήμα Φυσικής / Department of Physics | |
dc.type.uhtype | Article | en |
dc.description.notes | <p>Cited By :11</p> | en |
dc.source.abbreviation | J.Appl.Phys. | en |
dc.contributor.orcid | Christofides, Constantinos [0000-0002-4020-4660] | |
dc.gnosis.orcid | 0000-0002-4020-4660 | |