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A Transport Study of Arsenic Implanted Silicon - Influence of Thermal Annealing

dc.contributor.authorChristofides, Constantinosen
dc.contributor.authorGHIBAUDO, G.en
dc.contributor.authorJAOUEN, H.en
dc.creatorChristofides, Constantinosen
dc.creatorGHIBAUDO, G.en
dc.creatorJAOUEN, H.en
dc.date.accessioned2019-12-02T15:29:56Z
dc.date.available2019-12-02T15:29:56Z
dc.date.issued1987
dc.identifier.issn0035-1687
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58598
dc.sourceRevue De Physique Appliqueefr
dc.titleA Transport Study of Arsenic Implanted Silicon - Influence of Thermal Annealingen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1051/rphysap:01987002206040700
dc.description.volume22
dc.description.issue6
dc.description.startingpage407
dc.description.endingpage412
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.description.notes<p>PT: Jen
dc.description.notesTC: 10en
dc.description.notesJ9: REV PHYS APPL</p>en
dc.contributor.orcidChristofides, Constantinos [0000-0002-4020-4660]
dc.gnosis.orcid0000-0002-4020-4660


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