accepted for publication 22 May 1986)
Laboratoire de Physique des Composants à Semiconducteurs, Unité Associée au Centre National de la Recherche Scientifique 840, Ecole Nationale Supérieure d'Electronique et de Radioélectricité, 23 rue des Martyrs, 38031 Grenoble, France (Received 13 September 1985
Abstract
Electronic transport properties of heavily doped arsenic implanted silicon are reported. Hall mobility and sheet resistance as functions of temperature and frequency have been carried out both on annealed and as-implanted silicon films. The small values of the observed Hall mobility and strong frequency dependence of the transport coefficients emphasize the drastic alteration of nonannealed material. A semiquantitative analysis of the results is conducted using both shortrange and long-range disorder considerations (hopping and ...