A schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor
Date
2003Author
Hanbicki, A. T.Stroud, R. M.
Magno, R.
Kioseoglou, G.
Li, C. H.
Jonker, B. T.
Itskos, Grigorios
Mallory, R.
Yasar, M.
Petrou, Athos Chariton
Source
Digests of the Intermag ConferenceIntermag 2003: International Magnetics Conference
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A study was performed on a Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor. It was reported that spin injection from a Fe Schottky contact produced a spin polarization of 32% in an AlGaAs/GaAs quantum well. The atomic structure of the spin injecting interface was examined with transmission electron microscopy (TEM).