Spin polarization control through resonant states in an Fe/GaAs Schottky barrier
Date
2008Author
Honda, S.Itoh, H.
Inoue, J.
Kurebayashi, H.
Trypiniotis, Theodossis
Barnes, C. H. W.
Hirohata, A.
Bland, J. A. C.
ISSN
1098-0121Source
Physical Review B - Condensed Matter and Materials PhysicsVolume
78Issue
24Google Scholar check
Metadata
Show full item recordAbstract
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons transported through the barrier. The results account very well for experimental results including the tunneling of photoexcited electrons and suggest that the spin polarization (from -100% to 100%) is dependent on the Schottky barrier height. They also suggest that the sign of the spin polarization can be controlled with a bias voltage. © 2008 The American Physical Society.