Study of the induced damage and of the annealing kinetics of defects in ion implanted silicon using the photothermal reflectance technique

Abstract

Abstract Study of the annealing kinetics of defects in ion implanted silicon using the photothermal reflectance technique has been performed. The strong influence of the implant dose and of the annealing temperature on the measured signal indicates the sensitivity of this method to the presence of implant damage in the silicon layer. The activation energy of the recovery mechanism, found to be 0.15 eV, is consistent with the local reconstruction of the implanted layer.