Oblique hanle measurements of InAs/GaAs quantum dot spin-light emitting diodes
Date
2007Author
Itskos, GrigoriosHarbord, E.
Clowes, S. K.
Clarke, E.
Van Dorpe, P.
Van Roy, W.
Cohen, L. F.
Murray, R.
ISBN
978-0-7354-0397-0Source
AIP Conference Proceedings28th International Conference on the Physics of Semiconductors, ICPS 2006
Volume
893Pages
1289-1290Google Scholar check
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We report here electrical spin injection through an Fe contact into a quantum dot light emitting diode structure using the oblique Hanle geometry. The measured spin polarization in the ground state of the dots is estimated to be 7.5% at 15 K while the injected spin polarization into the structure is estimated to be 20%. © 2007 American Institute of Physics.