Efficient förster transfer mediated by excitons in InGaN/GaN quantum well/polyfluorene heterostructures
Date
2007Author
Itskos, GrigoriosHeliotis, G.
Belton, C.
Watson, I. M.
Dawson, M. D.
Bradley, D. D. C.
Murray, R.
ISBN
978-0-7354-0397-0Source
AIP Conference Proceedings28th International Conference on the Physics of Semiconductors, ICPS 2006
Volume
893Pages
355-356Google Scholar check
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Metadata
Show full item recordAbstract
We report on novel InGaN/GaN quantum well/polyfluorene heterostructures where efficient Förster energy transfer from the well to the organic layer occurs. We show that Mott-Wannier excitons dominate the quantum well luminescence in the quantum wells in the 77 to at least 225 K range and are responsible for the efficient energy channeling to the polyfluorene films. © 2007 American Institute of Physics.