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DEFECTS CHARACTERIZATION OF ARSENIC IMPLANTED SILICON BY AC HALL EFFECT MEASUREMENTS.

dc.contributor.authorJaouen, H.en
dc.contributor.authorGhibaudo, G.en
dc.contributor.authorChristofides, Constantinosen
dc.creatorJaouen, H.en
dc.creatorGhibaudo, G.en
dc.creatorChristofides, Constantinosen
dc.date.accessioned2019-12-02T15:30:38Z
dc.date.available2019-12-02T15:30:38Z
dc.date.issued1986
dc.identifier.isbn0-931837-37-5
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58750
dc.description.abstractAC and DC Hall effects measurements as a function of temperature (77-300K) and frequency (1Hz-100KHz) have been performed to characterize implanted Silicon films. This technique enables the determination of the annihilation processes of defects in such layers as a function of temperature of isochronal annealings (300 degree C to 1100 degree C during 1 hour). The experimental results are discussed with respect to proper transport models based on short and long range disorder considerations in order to find out the features of defects and inhomogeneities arising from implantation and their thermal annihilation after isochronal annealing.en
dc.publisherMaterials Research Socen
dc.sourceMaterials Research Society Symposia Proceedingsen
dc.sourceMaterials Issues in Silicon Integrated Circuit Processing.en
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0023020367&partnerID=40&md5=3a91386e58e0b9e74371e3aa99bede04
dc.subjectARSENIC IMPLANTED SILICONen
dc.subjectCRYSTALS - Electric Conductivityen
dc.subjectDEFECTS CHARACTERIZATIONen
dc.subjectHALL EFFECT MEASUREMENTSen
dc.subjectSEMICONDUCTING FILMS - Heat Treatmenten
dc.subjectSEMICONDUCTING SILICONen
dc.subjectSEMICONDUCTOR MATERIALS - Ion Implantationen
dc.titleDEFECTS CHARACTERIZATION OF ARSENIC IMPLANTED SILICON BY AC HALL EFFECT MEASUREMENTS.en
dc.typeinfo:eu-repo/semantics/conferenceObject
dc.description.volume71
dc.description.startingpage167
dc.description.endingpage172
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeConference Objecten
dc.description.notes<p>Sponsors: Materials Research Soc, Pittsburgh, PA, USAen
dc.description.notesConference code: 10355</p>en
dc.contributor.orcidChristofides, Constantinos [0000-0002-4020-4660]
dc.gnosis.orcid0000-0002-4020-4660


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