Photothermal radiometric measurements on metal contaminated silicon wafers
Date
1999Source
AIP Conference ProceedingsVolume
463Issue
1Pages
386-388Google Scholar check
Metadata
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Photothermal radiometric measurements were performed on metal contaminated silicon wafers. Data were collected over modulation frequencies ranging from 0.1 to 100kHz, with a Kr-Ar ion laser used as the excitation source. The sensitivity of this technique to different forms of metallic contamination is examined. A qualitative comparison is made between theory and experiment.