Nondestructive evaluation of metal contaminated silicon wafers using radiometric measurements
Date
1999ISSN
0021-8979Source
Journal of Applied PhysicsVolume
86Issue
6Pages
3064-3067Google Scholar check
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We have performed nondestructive measurements on metal contaminated silicon wafers using photothermal radiometric measurements. Data were collected as a function of modulation frequency and time, showing clear distinctions between the different samples examined. The sensitivity of this technique to different forms of metallic contamination is examined. A qualitative and semiquantitative comparison is made between theory and experiment.(C) 1999 American Institute of Physics. [S0021-8979(99)00618-0].