| dc.contributor.author | Karmiotis, Y. | en |
| dc.contributor.author | Nestoros, Marios | en |
| dc.contributor.author | Christofides, Constantinos | en |
| dc.creator | Karmiotis, Y. | en |
| dc.creator | Nestoros, Marios | en |
| dc.creator | Christofides, Constantinos | en |
| dc.date.accessioned | 2019-12-02T15:30:44Z | |
| dc.date.available | 2019-12-02T15:30:44Z | |
| dc.date.issued | 1998 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58773 | |
| dc.description.abstract | A comparative computational study of the finite thickness and semi-infinite photothermal radiometric model is carried out for silicon, germanium, and gallium arsenide. The sensitivity of the photothermal radiometric finite thickness model towards the existence of very thin amorphous layers on crystalline substrates is also explored. This study can be used as an important guide for experimentalists. (C) 1998 American Institute of Physics. | en |
| dc.source | Applied Physics Letters | en |
| dc.title | Finite thickness and semi-infinite photothermal radiometric models for the characterization of semiconductors | en |
| dc.type | info:eu-repo/semantics/article | |
| dc.identifier.doi | 10.1063/1.120848 | |
| dc.description.volume | 72 | |
| dc.description.issue | 6 | |
| dc.description.startingpage | 695 | |
| dc.description.endingpage | 697 | |
| dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
| dc.author.department | Τμήμα Φυσικής / Department of Physics | |
| dc.type.uhtype | Article | en |
| dc.description.notes | <p>PT: J | en |
| dc.description.notes | TC: 2 | en |
| dc.description.notes | J9: APPL PHYS LETT</p> | en |
| dc.source.abbreviation | Appl.Phys.Lett. | en |
| dc.contributor.orcid | Nestoros, Marios [0000-0002-2343-4771] | |
| dc.contributor.orcid | Christofides, Constantinos [0000-0002-4020-4660] | |
| dc.gnosis.orcid | 0000-0002-2343-4771 | |
| dc.gnosis.orcid | 0000-0002-4020-4660 | |
