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dc.contributor.authorKurebayashi, H.en
dc.contributor.authorSteinmuller, S. J.en
dc.contributor.authorLaloë, J. B.en
dc.contributor.authorTrypiniotis, Theodossisen
dc.contributor.authorEaston, S.en
dc.contributor.authorIonescu, A.en
dc.contributor.authorYates, J. R.en
dc.contributor.authorBland, J. A. C.en
dc.creatorKurebayashi, H.en
dc.creatorSteinmuller, S. J.en
dc.creatorLaloë, J. B.en
dc.creatorTrypiniotis, Theodossisen
dc.creatorEaston, S.en
dc.creatorIonescu, A.en
dc.creatorYates, J. R.en
dc.creatorBland, J. A. C.en
dc.date.accessioned2019-12-02T15:31:36Z
dc.date.available2019-12-02T15:31:36Z
dc.date.issued2007
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58805
dc.description.abstractSpin dependent electron transport across epitaxial FeGaAs (001) interfaces has been investigated using photoexcitation techniques. Spin filtering is observed in the forward bias regime and its sign is switched by using different photon energies. First principles calculations suggest that the spin polarization of the Fe layer is positive within the energy region into which spin polarized electrons tunnel. The authors attribute this sign switching to the initial and final states of the electrons tunneling across the interface, whose spin polarizations are determined by the selection rules in GaAs during photoexcitation and spin polarization of the Fe(001) layer, respectively. © 2007 American Institute of Physics.en
dc.sourceApplied Physics Lettersen
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-34548481264&doi=10.1063%2f1.2783187&partnerID=40&md5=3c0456687879d4c0634c77a4ec027ae8
dc.subjectSpin polarizationen
dc.subjectElectron transport propertiesen
dc.subjectInterfaces (materials)en
dc.subjectEpitaxial filmsen
dc.subjectElectron tunnelingen
dc.subjectPhotoexcitationen
dc.subjectBias regimeen
dc.subjectEnergy regionen
dc.subjectPhoton energiesen
dc.subjectSpin filteringen
dc.titleInitial/final state selection of the spin polarization in electron tunneling across an epitaxial FeGaAs (001) interfaceen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1063/1.2783187
dc.description.volume91
dc.description.issue10
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.description.notes<p>Cited By :19</p>en
dc.source.abbreviationAppl.Phys.Lett.en


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