dc.contributor.author | Kurebayashi, H. | en |
dc.contributor.author | Trypiniotis, Theodossis | en |
dc.contributor.author | Lee, K. | en |
dc.contributor.author | Easton, S. | en |
dc.contributor.author | Ionescu, A. | en |
dc.contributor.author | Farrer, I. | en |
dc.contributor.author | Ritchie, D. A. | en |
dc.contributor.author | Bland, J. A. C. | en |
dc.contributor.author | Barnes, C. H. W. | en |
dc.creator | Kurebayashi, H. | en |
dc.creator | Trypiniotis, Theodossis | en |
dc.creator | Lee, K. | en |
dc.creator | Easton, S. | en |
dc.creator | Ionescu, A. | en |
dc.creator | Farrer, I. | en |
dc.creator | Ritchie, D. A. | en |
dc.creator | Bland, J. A. C. | en |
dc.creator | Barnes, C. H. W. | en |
dc.date.accessioned | 2019-12-02T15:31:37Z | |
dc.date.available | 2019-12-02T15:31:37Z | |
dc.date.issued | 2010 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58806 | |
dc.description.abstract | Spin-dependent transport for photoexcited electrons in an epitaxial Fe/GaAs interface was characterized from 5 to 300 K. The presence of spin-dependent transport was confirmed at all the measured temperatures and the spin polarization across the interface is found to increase with decreasing temperature. A time-of-flight-type model based on the Dyakonov-Perel (DP) spin relaxation mechanism was employed to explain the temperature dependence, providing that the estimated spin relaxation time in GaAs is 62 ps at 5 K. This short spin relaxation time can be explained by the stronger efficiency of the DP mechanism for hot-electrons. © 2010 American Institute of Physics. | en |
dc.source | Applied Physics Letters | en |
dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-74549157150&doi=10.1063%2f1.3291066&partnerID=40&md5=6a9c6cd995f5f6bae17f2e62fc5ffed8 | |
dc.subject | Spin dynamics | en |
dc.subject | Temperature dependence | en |
dc.subject | Time of flight | en |
dc.subject | Relaxation processes | en |
dc.subject | Gallium alloys | en |
dc.subject | Gallium arsenide | en |
dc.subject | Semiconducting gallium | en |
dc.subject | GaAs | en |
dc.subject | Spin relaxation | en |
dc.subject | Photoexcited electrons | en |
dc.subject | Dynamic positioning | en |
dc.subject | Epitaxial Fe/GaAs | en |
dc.subject | Hot electrons | en |
dc.subject | Model-based | en |
dc.subject | Percolation (solid state) | en |
dc.subject | Spin dependent transport | en |
dc.subject | Spin relaxation time | en |
dc.title | Electrical determination of the spin relaxation time of photoexcited electrons in GaAs | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1063/1.3291066 | |
dc.description.volume | 96 | |
dc.description.issue | 2 | |
dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
dc.author.department | Τμήμα Φυσικής / Department of Physics | |
dc.type.uhtype | Article | en |
dc.description.notes | <p>Cited By :13</p> | en |
dc.source.abbreviation | Appl.Phys.Lett. | en |