Study of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry

Abstract

In this work, we have studied the changes in the optical properties on crystalline silicon implanted wafers (1 × 1013-1 × 1016 P+/cm2) using an extensive ellipsometric analysis. The effects of implantation energy (20-180 KeV) and subsequent isochronical annealing temperature (300-1100°C) on the electronic band structure of material are investigated. The evolution of pseudodielectric functions is studied using a temperature dependent multilayer model for each implantation dose and energy. The temperature evolution of integrated damage depth profile for each wafer is presented depicting the amorphous/crystalline transition temperatures. Finally, the critical implantation dose and energy of crystalline to amorphous silicon phase are given. © 2006 American Institute of Physics.