dc.contributor.author | Lioudakis, Emmanouil E. | en |
dc.contributor.author | Othonos, Andreas S. | en |
dc.creator | Lioudakis, Emmanouil E. | en |
dc.creator | Othonos, Andreas S. | en |
dc.date.accessioned | 2019-12-02T15:31:46Z | |
dc.date.available | 2019-12-02T15:31:46Z | |
dc.date.issued | 2008 | |
dc.identifier.issn | 1862-6254 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58837 | |
dc.description.abstract | In this letter, we have studied transient photoinduced absorption in as-grown nanocrystallinc silicon films with thickness varied from 5 to 30 nm. Effects of quantum confinement (QC) in z-direction and grain boundary distortions alter the carrier dynamics of these films considerably. Based on the determination of critical points in the first Brillouin zone of the band structure of materials, we have time-resolved the relaxation times of surface-related states and indirect valleys. When decreasing the film thickness down to the QC limit (∼ 10 nm) new ultrafast relaxation mechanisms start to play a dominant role in carrier dynamics due to the topological disordering of these ultrathin films. These relaxation mechanisms seem to be related with the traping/ de-traping of the excited carriers prior to recombination. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. | en |
dc.source | Physica Status Solidi - Rapid Research Letters | en |
dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-38149058358&doi=10.1002%2fpssr.200701219&partnerID=40&md5=bce0c4b3adb09d2f92767e5342d81428 | |
dc.subject | Ultrathin films | en |
dc.subject | Grain boundaries | en |
dc.subject | Crystal growth | en |
dc.subject | Band structure | en |
dc.subject | Film thickness | en |
dc.subject | Ultrafast carrier dynamics | en |
dc.subject | Semiconducting silicon | en |
dc.subject | Silicon films | en |
dc.subject | Grain boundary distortions | en |
dc.subject | Nanocrystalline silicon | en |
dc.title | Time-resolved ultrafast carrier dynamics in as-grown nanocrystalline silicon films: The effect of film thickness and grain boundaries | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1002/pssr.200701219 | |
dc.description.volume | 2 | |
dc.description.issue | 1 | |
dc.description.startingpage | 19 | |
dc.description.endingpage | 21 | |
dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
dc.author.department | Τμήμα Φυσικής / Department of Physics | |
dc.type.uhtype | Article | en |
dc.description.notes | <p>Cited By :4</p> | en |
dc.source.abbreviation | Physica Status Solidi Rapid Res.Lett. | en |
dc.contributor.orcid | Othonos, Andreas S. [0000-0003-0016-9116] | |
dc.gnosis.orcid | 0000-0003-0016-9116 | |