| dc.contributor.author | Lioudakis, Emmanouil E. | en |
| dc.contributor.author | Othonos, Andreas S. | en |
| dc.contributor.author | Dimakis, Emmanouil | en |
| dc.contributor.author | Georgakilas, A. | en |
| dc.creator | Lioudakis, Emmanouil E. | en |
| dc.creator | Othonos, Andreas S. | en |
| dc.creator | Dimakis, Emmanouil | en |
| dc.creator | Georgakilas, A. | en |
| dc.date.accessioned | 2019-12-02T15:31:47Z | |
| dc.date.available | 2019-12-02T15:31:47Z | |
| dc.date.issued | 2006 | |
| dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58842 | |
| dc.description.abstract | In view of promising full-solar-spectrum photovoltaic systems based on Inx Ga1-x N ternary alloys, femtosecond time-resolved study in ultrathin epilayers was employed in order to extract the fundamental properties of material. Two different thicknesses of epilayers were employed with relative high indium mole fractions. State filling effect at various probing energy states has been observed for both epilayers. Saturation of state filling as well as enhanced photoinduced absorption occurred at higher probing wavelengths. Furthermore, coherent acoustic phonon oscillations were also observed for both ultrathin epilayers with a thickness dependent oscillation frequency. Finally, absorption band edge of these alloys has been determined. © 2006 American Institute of Physics. | en |
| dc.source | Applied Physics Letters | en |
| dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-33845758561&doi=10.1063%2f1.2405413&partnerID=40&md5=4518d6936379570a0421c42d5fcf4aba | |
| dc.subject | Photovoltaic systems | en |
| dc.subject | Ultrathin films | en |
| dc.subject | Gallium nitride | en |
| dc.subject | Oscillations | en |
| dc.subject | Light absorption | en |
| dc.subject | Electron energy levels | en |
| dc.subject | Phonons | en |
| dc.subject | Mole fraction | en |
| dc.subject | Phonon oscillations | en |
| dc.subject | State filling | en |
| dc.title | Femtosecond time-resolved study in InxGa1-xN (0001) ultrathin epilayers: Effects of high indium mole fraction and thickness of the films | en |
| dc.type | info:eu-repo/semantics/article | |
| dc.identifier.doi | 10.1063/1.2405413 | |
| dc.description.volume | 89 | |
| dc.description.issue | 24 | |
| dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
| dc.author.department | Τμήμα Φυσικής / Department of Physics | |
| dc.type.uhtype | Article | en |
| dc.description.notes | <p>Cited By :1</p> | en |
| dc.source.abbreviation | Appl.Phys.Lett. | en |
| dc.contributor.orcid | Othonos, Andreas S. [0000-0003-0016-9116] | |
| dc.gnosis.orcid | 0000-0003-0016-9116 | |
