Ultrafast carrier dynamics in Inx Ga1-x N (0001) epilayers: Effects of high fluence excitation

Abstract

Ultrafast carrier dynamics in Inx Ga1-x N (0001) epilayers were investigated, using femtosecond transient differential transmission and reflection measurements for x=0.07, 0.15, and 0.33, over a fluence range of 1-12 mJ cm2. Stimulated emission as well as band gap renormalization play a crucial role in the dynamics of the photogenerated carriers. Threshold fluence leading to saturation of the differential reflectivity and transmission signals related to the In mole fraction has been observed, which is attributed to band gap renormalization, Auger process, and carrier recombination through In-rich nanoclusters. Furthermore, coherent acoustic phonon oscillations have also been observed in the In0.15 Ga0.85 N at high fluence excitation. © 2006 American Institute of Physics.