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dc.contributor.authorLioudakis, Emmanouil E.en
dc.contributor.authorOthonos, Andreas S.en
dc.contributor.authorNassiopoulou, Androula Galiounaen
dc.creatorLioudakis, Emmanouil E.en
dc.creatorOthonos, Andreas S.en
dc.creatorNassiopoulou, Androula Galiounaen
dc.date.accessioned2019-12-02T15:31:49Z
dc.date.available2019-12-02T15:31:49Z
dc.date.issued2006
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58849
dc.description.abstractPolycrystalline silicon thin film samples implanted and annealed at various temperatures have been studied using ultrafast laser pulse excitation. Nondegenerate pump-probe technique has been utilized to investigate carrier dynamics in the highly implanted samples at a relatively small fluence. A model based on two coupled differential equations has been used to fit the experimental data, giving a simple but adequate picture of the dynamics of this system. Basic sample parameters such as carrier trapping times, diffusion coefficient, and penetration depths have been extracted, providing a dependence on the annealing temperature for the samples under investigation. © 2006 American Institute of Physics.en
dc.sourceApplied Physics Lettersen
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-33646521806&doi=10.1063%2f1.2200745&partnerID=40&md5=47b0bce7e59f1ccb215110c49e3efd40
dc.subjectDifferential equationsen
dc.subjectDiffusionen
dc.subjectPolycrystalline materialsen
dc.subjectCarrier concentrationen
dc.subjectThin filmsen
dc.subjectSiliconen
dc.subjectCarrier dynamicsen
dc.subjectPump-probe techniqueen
dc.subjectLaser pulsesen
dc.subjectAnnealing temperatureen
dc.subjectLaser pulse excitationen
dc.titleProbing carrier dynamics in implanted and annealed polycrystalline silicon thin films using white lighten
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1063/1.2200745
dc.description.volume88
dc.description.issue18
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.description.notes<p>Cited By :7</p>en
dc.source.abbreviationAppl.Phys.Lett.en
dc.contributor.orcidOthonos, Andreas S. [0000-0003-0016-9116]
dc.gnosis.orcid0000-0003-0016-9116


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