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dc.contributor.authorNestoros, Mariosen
dc.contributor.authorMourouti, M.en
dc.contributor.authorPapanicolaou, N. C.en
dc.contributor.authorChristofides, Constantinosen
dc.creatorNestoros, Mariosen
dc.creatorMourouti, M.en
dc.creatorPapanicolaou, N. C.en
dc.creatorChristofides, Constantinosen
dc.date.accessioned2019-12-02T15:32:04Z
dc.date.available2019-12-02T15:32:04Z
dc.date.issued2011
dc.identifier.issn1842-6573
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58915
dc.description.abstractA series of ion implanted Si thin film pseudo-devices with various dimensions in the micrometer region was investigated for different values and orientations of an applied external electric field, utilizing photothermal microscopy. The important features of the photothermal signal namely its linearity as a function of the applied electric field as well as the saturation effect are discussed and an one dimensional model is used for a qualitative interpretation of the results. Photothermal microscopy is proved to be a sensitive technique for carrier transport monitoring in microelectronic circuit elements.en
dc.sourceOptoelectronics and Advanced Materials-Rapid Communicationsen
dc.subjectPhotothermal microscopyen
dc.subjectTEMPERATUREen
dc.subjectOPTICAL REFLECTANCEen
dc.subjectTHERMOREFLECTANCEen
dc.subjectCarrier transporten
dc.subjectCONTRASTen
dc.subjectImplanted silicon thin filmsen
dc.subjectINTERFACEen
dc.subjectLASERSen
dc.subjectLAYERSen
dc.subjectSUBSTRATEen
dc.titleA photothermal microscopy investigation of carrier transport in ion implanted silicon thin films under the action of external electric fielden
dc.typeinfo:eu-repo/semantics/article
dc.description.volume5
dc.description.issue5-6
dc.description.startingpage505
dc.description.endingpage509
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.description.notes<p>PT: Jen
dc.description.notesTC: 1en
dc.description.notesJ9: OPTOELECTRON ADV MAT</p>en
dc.source.abbreviationOptoelectron.Adv.Mater.-Rapid Commun.en
dc.contributor.orcidNestoros, Marios [0000-0002-2343-4771]
dc.contributor.orcidChristofides, Constantinos [0000-0002-4020-4660]
dc.gnosis.orcid0000-0002-2343-4771
dc.gnosis.orcid0000-0002-4020-4660


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