Raman spectroscopy and spreading resistance analysis of phosphorus implanted and annealed silicon

Abstract

Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies and doses, below, and over the critical dose of amorphization. The post-implanted period was followed by thermal isochronal annealing at various temperatures. Special attention has been given to the amorphous/crystal transition occurring at various annealing temperatures. A bi layer model [R. Loudon, J. Phys. (Paris) 26, 677 (1965)] has been used for a quantitative determination of the annealing temperature at which a complete annihilation of implantation defects takes place. For this analysis, Raman spectra, resistivity depth profiles, as well as 1D-SUPREM III simulation were used.