Photothermal radiometric investigation of implanted silicon: The influence of dose and thermal annealing
Date
1996Source
Applied Physics LettersVolume
69Issue
6Pages
821-823Google Scholar check
Metadata
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Photothermal radiometric measurements were performed on phosphorus implanted and annealed silicon wafers. Data were collected over modulation frequencies ranging between 0.1 and 100 kHz with the 488 nm Ar ion laser line as the excitation source. The sensitivity of this technique on implantation dose and annealing temperature is discussed. A semiquantitative analysis of the data is also carried out. © 1996 American Institute of Physics.