Noncontact Lifetime Reconstruction in Continuously Inhomogeneous Semiconductors: Generalized Theory and Experimental Photothermal Results for Ion-Implanted Si
Date
1997Source
Review of Progress in Quantitative Nondestructive EvaluationPages
371-378Google Scholar check
Metadata
Show full item recordAbstract
Abstract The common feature of all previous photothermal studies of semiconductors is that only electronically homogeneous materials have been assumed. Correspondingly, both carrier lifetime (τ) and diffusivity (D n) values have been usually taken to be the bulk characteristics of semiconductor and no experimental works or theoretical models have addressed the problem of τ and D n depth profile reconstructions. For continuously inhomogeneous solids the treatment of the thermal-wave propagation problem using a ...