Infrared-Spectroscopy and Electrical Characterization of Phosphorus Implanted and Annealed Silicon Layers

Abstract

Fourier transform infrared spectroscopy has been carried out in the spectral range of 2.5 to 25 mu m, both in transmission and reflection mode on phosphorus-implanted, non-annealed and annealed silicon layers. Complementary electrical measurements were also performed. Special attention was given to the influence of implantation and annealing temperature on optical properties. The theoretical model of Schumann and Phillips was used in order to discuss the variation of concentration of activated free carriers. Some important conclusions concerning the annihilation of defects and the reconstruction kinetics of the amorphous damaged layer were obtained. Also for the first time an attempt to study the variation of the effective mass as a function of the implantation dose and annealing temperature was made.