Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes
Date
2002Author
Stroud, R. M.Hanbicki, A. T.
Park, Y. D.
Kioseoglou, G.
Petukhov, A. G.
Jonker, B. T.
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Petrou, Athos Chariton
Source
Physical Review LettersVolume
89Issue
16Pages
166602/1-166602/4Google Scholar check
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The effects of the interface microstructure on spin-injection efficiency in Zn1-xMnxSe/AlyGa1-yAs-GaAs spin-polarized light-emitting diodes (spin-LEDs) were studied. It was shown that the quantum well (QW) spin polarization correlates inversely with the density of linear defects resulting from stacking faults at the ZnMnSe/AlGaAs interface.